Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-23
2011-08-23
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S780000, C438S781000, C257SE21546
Reexamination Certificate
active
08003487
ABSTRACT:
In methods of forming a trench, first patterns separated from each other by a first width and second patterns separated from each other by a second width are formed on a substrate. The second width is wider than the first width. The substrate is etched using the first patterns and the second patterns to form a first trench having a first depth and a preliminary second trench having a second depth. A sacrificial layer is formed to fill up a space between the first patterns. The substrate is etched using the sacrificial layer to form a second trench having a third depth deeper than the second depth.
REFERENCES:
patent: 2004/0135264 (2004-07-01), Yamazaki et al.
patent: 11-195702 (1999-07-01), None
patent: 2005-294759 (2005-10-01), None
patent: 2006-80310 (2006-03-01), None
Cho Du-Hyun
Jeong Sang-Sup
Kang Tae-Woo
Song Jong-Heui
Yoo Seung-Joo
Ghyka Alexander G
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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