Methods of manufacturing a semiconductor device

Details Methods of manufacturing a semiconductor device Methods of manufacturing a semiconductor device

2005-07-12

2005-07-12

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S631000, C438S633000, C438S635000, C438S643000, C438S653000, C438S672000, C438S687000, C438S692000, C438S700000, C438S702000, C438S958000

Reexamination Certificate

active

06916737

ABSTRACT:
Methods of manufacturing semiconductor devices are disclosed. In an illustrated method, a contact hole in an insulating layer is filled with a copper layer and the copper layer is planarized. During the planarzing, a CuO layer is parasitically formed on the surface of the copper layer. The CuO layer is removed by plasma processing using ammonia or nitrogen. A conductive CuN layer is formed on the surface of the copper layer. Stability of the removal process of CuO layer is secured.

REFERENCES:
patent: 6211085 (2001-04-01), Liu
patent: 6255217 (2001-07-01), Agnello et al.
patent: 6599827 (2003-07-01), Ngo et al.
patent: 2002/0142622 (2002-10-01), Iijima et al.
patent: 2003/0087522 (2003-05-01), Ngo et al.
patent: 2003/0114000 (2003-06-01), Noguchi
patent: 2003/0203614 (2003-10-01), Rajagopalan et al.

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