Methods of jointly forming stacked capacitors and antifuses

Details Methods of jointly forming stacked capacitors and antifuses Methods of jointly forming stacked capacitors and antifuses

1997-03-21

1998-05-26

Tsai, H. Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438131, 148DIG55, H01L 2144

Patent

active

057563934

ABSTRACT:
A method of jointly forming stacked capacitors and antifuses includes, a) providing a common layer of electrically conductive material to form both a capacitor storage node and an inner antifuse plate; b) providing a common layer of dielectric material over the capacitor storage node and the inner antifuse plate, the common layer of dielectric material comprising both an intervening capacitor dielectric element and an intervening antifuse dielectric element, the common layer of dielectric material having a first breakdown voltage per unit length value for a given current per unit area; c) providing a common layer of electrically conductive material over the common layer of dielectric material to form both a capacitor cell layer and an outer antifuse plate; d) providing a lateral edge of the outer antifuse plate and a lateral edge of the intervening antifuse dielectric element; and e) depositing an antifuse breakdown layer of dielectric material over the lateral edges of the outer antifuse plate and the intervening antifuse dielectric element, the antifuse breakdown layer having a second breakdown voltage per unit length value for the same given current per same unit area which is lower than said first breakdown voltage per unit length value. Novel antifuse constructions, integrated circuitry and method of blowing antifuses are also disclosed.

REFERENCES:
patent: 5208177 (1993-05-01), Lee
patent: 5219782 (1993-06-01), Liu
patent: 5324681 (1994-06-01), Lowrey et al.
patent: 5508220 (1996-04-01), Eltoukhy et al.
patent: 5592016 (1997-01-01), Go

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