Methods of increasing write selectivity in an MRAM

Details Methods of increasing write selectivity in an MRAM Methods of increasing write selectivity in an MRAM

2006-01-31

2006-01-31

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06992918

ABSTRACT:
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

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