Methods of heat treating silicon oxide films by irradiating ultr

Details Methods of heat treating silicon oxide films by irradiating ultr Methods of heat treating silicon oxide films by irradiating ultr

1995-08-02

1999-10-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438162, 438909, 438910, H01L 218234

Patent

active

059703849

ABSTRACT:
Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

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