Methods of heat-treating semiconductor wafers

Details Methods of heat-treating semiconductor wafers Methods of heat-treating semiconductor wafers

1997-11-26

1999-08-31

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 97, 117106, 438 58, 438471, C30B 2520

Patent

active

059448890

ABSTRACT:
With a view to optimizing the donor killing process performed in the semiconductor wafer fabricating process, a heat-treating operation is performed in a thermal furnace above at least 900 .degree. C. for a predetermined time so that growth of the initial oxygen precipitates, induced into the crystal lattices during single-crystal growth, is suppressed. Thus, the oxygen precipitates are easily suppressed, irrespective of the concentration of the initial oxygen, so that the yield of the semiconductor device is improved

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