Methods of growing nitride-based film using varying pulses

Details Methods of growing nitride-based film using varying pulses Methods of growing nitride-based film using varying pulses

2007-03-20

2007-03-20

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S483000, C438S046000

Reexamination Certificate

active

10713326

ABSTRACT:
Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.

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