Methods of forming trench isolation regions

Details Methods of forming trench isolation regions Methods of forming trench isolation regions

2005-08-22

2008-07-22

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S435000, C438S508000, C438S508000

Reexamination Certificate

active

07402498

ABSTRACT:
The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate. A trench isolation material is formed within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench. The trench isolation material is polished at least to an outermost surface of the at least one of tungsten, titanium nitride and amorphous carbon of the masking material. The at least one of tungsten, titanium nitride and amorphous carbon is/are etched from the substrate. Other implementations and aspects are contemplated.

REFERENCES:
patent: 4675265 (1987-06-01), Kazama et al.
patent: 5362668 (1994-11-01), Tasaka
patent: 5393694 (1995-02-01), Mathews
patent: 5736296 (1998-04-01), Sato et al.
patent: 6069055 (2000-05-01), Ukeda et al.
patent: 6140208 (2000-10-01), Agahi et al.
patent: 6261922 (2001-07-01), Walker et al.
patent: 6323104 (2001-11-01), Trivedi
patent: 6340624 (2002-01-01), Doan et al.
patent: 6355966 (2002-03-01), Trivedi
patent: 6391738 (2002-05-01), Moore
patent: 6413828 (2002-07-01), Lam
patent: 6576530 (2003-06-01), Chen et al.
patent: 6583028 (2003-06-01), Doan et al.
patent: 6593206 (2003-07-01), Dickerson et al.
patent: 6653202 (2003-11-01), Fisher et al.
patent: 6750117 (2004-06-01), Hung et al.
patent: 6750127 (2004-06-01), Chang et al.
patent: 6774007 (2004-08-01), Liu et al.
patent: 6939794 (2005-09-01), Yin et al.
patent: 2002/0173163 (2002-11-01), Gutsche
patent: 2006/0006502 (2006-01-01), Yin et al.
patent: 5176627 (1992-09-01), None
patent: PCT/US2005/010197 (2005-09-01), None
patent: PCT/US2005/010197 (2005-10-01), None
patent: PCT/US2005/010197 (2006-07-01), None
D. F. Franceschini et al.,Internal stress reduction by nitrogen incorporation in hard amorphous carbon thin films, Appl. Phys. Lett., vol. 60, No. 29, pp. 3229-3231 (Jun. 29, 1992).

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