Methods of forming titanium-containing materials

Details Methods of forming titanium-containing materials Methods of forming titanium-containing materials

2008-03-07

2009-11-24

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21593

Reexamination Certificate

active

07622388

ABSTRACT:
The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance, the invention can utilize alternating cycles of titanium tetrachloride and activated hydrogen to form titanium silicide on a surface of a silicon-containing substrate.

REFERENCES:
patent: 4619038 (1986-10-01), Pintchovski
patent: 7049702 (2006-05-01), Tseng
patent: 2004/0180543 (2004-09-01), Lee et al.
Osama A. Fouad, et al. “Titanium disilicide formation by rf plasma enhanced chemical vapor deposition and film properties” Elsevier Science 2002, pp. 159-166.
Robert Beyers, et al. “Metastable phase formation in titanium-silicon thin films” Journal of Applied Physics 57(12), Jun. 15, 1985 pp. 5240-5245.

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