Methods of forming through substrate interconnects

Details Methods of forming through substrate interconnects Methods of forming through substrate interconnects

2007-08-16

2011-10-11

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S639000, C438S667000

Reexamination Certificate

active

08034702

ABSTRACT:
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

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