Methods of forming thin film transistors

Details Methods of forming thin film transistors Methods of forming thin film transistors

1996-12-19

1999-09-14

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, H01L 2100, H01L 2184

Patent

active

059535962

ABSTRACT:
A method of forming film transistor includes, a) forming a thin film transistor layer of semiconductive material; b) providing a gate operatively adjacent the thin film transistor layer; c) forming at least one electrically conductive sidewall spacer over at least one lateral edge of the gate, the spacer being electrically continuous therewith; and d) providing a source region, a drain region, a drain offset region, and a channel region in the thin film transistor layer; the drain offset region being positioned operatively adjacent the one electrically conductive sidewall spacer and being gated thereby. The spacer is formed by anisotropically etching a spacer forming layer.

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