Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-28
2011-06-28
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S423000, C438S430000, C438S528000, C257SE21547
Reexamination Certificate
active
07968960
ABSTRACT:
In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region has a channel region and the isolation regions have strain-inducing regions laterally adjacent to the channel regions. The channel region is strained with a desired strain for carrier mobility enhancement, where at least one ion type is implanted with an energy resulting in a peak implant in the strain-inducing regions of the isolation regions. Other aspects and embodiments are provided herein.
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Bhattacharyya Arup
Farrar Paul A.
Forbes Leonard
Hu Shouxiang
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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