Methods of forming stepped bumps and structures formed thereby

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21508, C257SE21513

Reexamination Certificate

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07659192

ABSTRACT:
Methods of forming a microelectronic device and associated structures are described. Those methods may comprise forming a die-side conductive interconnect on a substrate, wherein the die-side conductive interconnect comprises a columnar portion and a base portion, and wherein a diameter of the base portion is greater than a diameter of the columnar portion.

REFERENCES:
patent: 5739053 (1998-04-01), Kawakita et al.
patent: 6074893 (2000-06-01), Nakata et al.
patent: 2002/0076912 (2002-06-01), Suzuki
patent: 2002/0127836 (2002-09-01), Lin et al.
patent: 09321138 (1997-12-01), None

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