Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-29
2010-02-09
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508, C257SE21513
Reexamination Certificate
active
07659192
ABSTRACT:
Methods of forming a microelectronic device and associated structures are described. Those methods may comprise forming a die-side conductive interconnect on a substrate, wherein the die-side conductive interconnect comprises a columnar portion and a base portion, and wherein a diameter of the base portion is greater than a diameter of the columnar portion.
REFERENCES:
patent: 5739053 (1998-04-01), Kawakita et al.
patent: 6074893 (2000-06-01), Nakata et al.
patent: 2002/0076912 (2002-06-01), Suzuki
patent: 2002/0127836 (2002-09-01), Lin et al.
patent: 09321138 (1997-12-01), None
Agraharam Sairam
Rangaraj Sudarshan
Wang Guotao
Yeohi Andrew
Intel Corporation
Ortiz Kathy J.
Sarkar Asok K
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