Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-04-26
2011-04-26
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S152000, C438S455000, C257SE21162, C257SE21482, C257SE21507
Reexamination Certificate
active
07932163
ABSTRACT:
Spaced apart bonding surfaces are formed on a first substrate. A second substrate is bonded to the bonding surfaces of the first substrate and cleaved to leave respective semiconductor regions from the second substrate on respective ones of the spaced apart bonding surfaces of the first substrate. The bonding surfaces may include surfaces of at least one insulating region on the first substrate, and at least one active device may be formed in and/or on at least one of the semiconductor regions. A device isolation region may be formed adjacent the at least one of the semiconductor regions.
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Bae Dae-Lok
Choi Suk-Hun
Hong Chang-ki
Lim Jong-Heun
Yoon Bo-Un
Ghyka Alexander G
Mustapha Abdulfattah
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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