Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-07-17
2007-07-17
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S695000, C438S719000
Reexamination Certificate
active
10914994
ABSTRACT:
Techiques for forming a silicon quantum dot, which can be applied to the formation of a semiconductor memory device, are disclosed. The techniques may include depositing a first dielectric layer on a semiconductor substrate, depositing a polysilicon layer on the first dielectric layer, forming a plurality of metal clusters on the polysilicon layer in regular distance, and etching the polysilicon layer using the plurality of metal clusters as a mask. As disclosed herein, it is possible to form the silicon quantum dots having the fineness and uniformity characteristic together with the single crystalline level characteristic.
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Fortney Andrew D.
Lee Hsien-Ming
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