Methods of forming shallow trench isolation

Details Methods of forming shallow trench isolation Methods of forming shallow trench isolation

2005-12-13

2005-12-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S734000, C438S750000, C438S700000

Reexamination Certificate

active

06974756

ABSTRACT:
A method of forming a shallow trench isolation is disclosed. An example method of forming a shallow trench isolation performs a planarization process for a substrate on which a hard mask and an insulation layer are formed, selectively etching the insulation layer on the edge of the substrate by using wet etch equipment, and performs a main etching process in the center region of the substrate.

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