Methods of forming semiconductor-on-insulator constructions

Details Methods of forming semiconductor-on-insulator constructions Methods of forming semiconductor-on-insulator constructions

2002-04-05

2009-02-24

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S407000, C438S480000, C438S295000, C257SE21561, C257SE21563, C257SE21564

Reexamination Certificate

active

07494901

ABSTRACT:
The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.

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