Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-12-27
2005-12-27
Wilson, Christian (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000, C438S433000
Reexamination Certificate
active
06979628
ABSTRACT:
Semiconductor devices and methods of forming devices that have field oxides in trenches are disclosed. According to the methods, a semiconductor substrate is prepared. An upper trench is formed at a predetermined region of the semiconductor substrate and a bottom trench is formed at a bottom surface of the upper trench. A field oxide is formed to fill the bottom trench and the upper trench. At this time, the upper trench has a wider width than the bottom trench.
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English language abstract of Japanese Publication No. 10-056059.
English language abstract of Korean Publication No. 1020010054164 A.
Cho Seong-Soon
Choi Jung-Dal
Kim Hong-Soo
Park Kyu-Charn
Samsung Electronics Co,. Ltd.
Wilson Christian
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