Methods of forming semiconductor devices and methods of forming

Details Methods of forming semiconductor devices and methods of forming Methods of forming semiconductor devices and methods of forming

1998-09-01

2000-03-14

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

216 11, 216 42, 216 49, 216 51, 216 67, 445 24, 445 50, H01J 900, G03C 500

Patent

active

060371048

ABSTRACT:
In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.

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K. Kim et al., "Generation of Charged Liquid Cluster Beam of Liquid-Mix Precursors and Application to Nanostructured Materials", May 1994, pp. 597-602.

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