Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2007-10-02

2007-10-02

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S296000, C257SE21244, C257SE21548

Reexamination Certificate

active

11137752

ABSTRACT:
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is placed within a reaction chamber. The substrate comprises a center region and an edge region surrounding the center region. The substrate comprises openings within the center region, and openings within the edge region. While the substrate is within the reaction chamber, a layer of insulative material is formed across the substrate. The layer is thicker over the one of the center region and edge region than over the other of the center region and edge region. The layer is exposed to an etch which removes the insulative material faster from over the one of the center region and edge region than from over the other of the center region and edge region.

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