Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2007-03-13

2007-03-13

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S424000, C438S437000, C438S787000, C257SE21193, C257SE21212

Reexamination Certificate

active

10925793

ABSTRACT:
The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspects, a semiconductor construction is passivated by subjecting the construction to an anneal at a temperature of greater than or equal to 350° C. while exposing the construction to a deuterium-enriched ambient.

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patent: 7022560 (2006-04-01), Olofsson
patent: 2002/0132493 (2002-09-01), Watt et al.
patent: 2004/0058557 (2004-03-01), Eisele et al.
patent: 2005/0170608 (2005-08-01), Kiyotoshi et al.
patent: 2006/0003595 (2006-01-01), Passlack et al.

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