Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-04-03
2007-04-03
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S296000, C438S405000, C438S416000, C438S429000, C438S589000, C438S700000, C257SE27112
Reexamination Certificate
active
11204806
ABSTRACT:
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is formed in the uncovered portion and at least partially filled with a semiconductive material that comprises at least one atomic percent of an element other than silicon. The mask is removed and a first semiconductor circuit component is formed over the first portion of the substrate. Also, a second semiconductor circuit component is formed over the semiconductive material that at least partially fills the trench. The invention also includes semiconductor constructions.
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Gonzalez Fernando
Ping Er-Xuan
Diaz José R.
Micro)n Technology, Inc.
Parker Kenneth
Wells St. John P.S.
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