Methods of forming ruthenium film by changing process...

Details Methods of forming ruthenium film by changing process... Methods of forming ruthenium film by changing process...

2007-09-18

2007-09-18

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S239000, C438S652000, C438S658000, C438S660000, C438S670000, C438S680000, C438S681000, C438S686000, C438S250000

Reexamination Certificate

active

10800826

ABSTRACT:
A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.

REFERENCES:
patent: 5231056 (1993-07-01), Sandhu
patent: 5314845 (1994-05-01), Lee et al.
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5834357 (1998-11-01), Kang
patent: 5852307 (1998-12-01), Aoyama et al.
patent: 6063705 (2000-05-01), Vaartstra
patent: 6078072 (2000-06-01), Okudaira et al.
patent: 6156599 (2000-12-01), Aoyama et al.
patent: 6187622 (2001-02-01), Kuroiwa et al.
patent: 6333529 (2001-12-01), Ashida et al.
patent: 6403441 (2002-06-01), Takehiro et al.
patent: 6420582 (2002-07-01), Okamoto
patent: 6440495 (2002-08-01), Wade et al.
patent: 6479100 (2002-11-01), Jin et al.
patent: 2001/0006838 (2001-07-01), Won et al.
patent: 2001/0031527 (2001-10-01), Park
patent: 2001/0050391 (2001-12-01), Matsuno et al.
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2002/0055254 (2002-05-01), Sano et al.
patent: 2002/0058415 (2002-05-01), Derderian et al.
patent: 2002/0146513 (2002-10-01), Jin et al.
patent: 2002/0192896 (2002-12-01), Matsui et al.
patent: 11168200 (1999-06-01), None

Affiliated with

Also associated with

Rating

Methods of forming ruthenium film by changing process... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming ruthenium film by changing process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming ruthenium film by changing process... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3727122