Methods of forming rugged semiconductor-containing surfaces

Details Methods of forming rugged semiconductor-containing surfaces Methods of forming rugged semiconductor-containing surfaces

2005-07-12

2005-07-12

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S255000, C438S398000, C438S964000

Reexamination Certificate

active

06916723

ABSTRACT:
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

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