Methods of forming roughened layers of platinum

Details Methods of forming roughened layers of platinum Methods of forming roughened layers of platinum

2006-06-13

2006-06-13

Nguyen, Ha Tran (Department: 2824)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S964000, C438S686000, C438S398000

Reexamination Certificate

active

07060615

ABSTRACT:
A method of forming a roughened layer of platinum, including: a) providing a substrate within a reaction chamber; b) forming an adhesion layer over the substrate; c) flowing an oxidizing gas into the reaction chamber; d) flowing a platinum precursor into the reaction chamber and depositing platinum from the platinum precursor onto the adhesion layer in the presence of the oxidizing gas; and e) maintaining a temperature within the reaction chamber at from about 0° C. to less than 300° C. during the depositing.

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