Methods of forming resistive memory devices

Details Methods of forming resistive memory devices Methods of forming resistive memory devices

2010-05-20

2011-11-15

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S381000, C438S382000

Reexamination Certificate

active

08058097

ABSTRACT:
Methods of forming a resistive memory device include forming an insulation layer on a semiconductor substrate including a conductive pattern, forming a contact hole in the insulation layer to expose the conductive pattern, forming a lower electrode in the contact hole, forming a variable resistive oxide layer in the contact hole on the lower electrode, forming a middle electrode in the contact hole on the variable resistive oxide layer, forming a buffer oxide layer on the middle electrode and the insulation layer, and forming an upper electrode on the buffer oxide layer. Related resistive memory devices are also disclosed.

REFERENCES:
patent: 2006/0215445 (2006-09-01), Baek et al.
patent: 2004-311512 (2004-11-01), None
patent: 2006-080259 (2006-03-01), None
patent: 1020060103705 (2006-10-01), None

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