Methods of forming polycrystalline semiconductor layers

Details Methods of forming polycrystalline semiconductor layers Methods of forming polycrystalline semiconductor layers

1998-02-19

2000-05-02

Fourson, George

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438479, 438487, 117 8, H01L 21265

Patent

active

060572132

ABSTRACT:
Methods of forming polycrystalline semiconductor layers include the steps of forming a first polycrystalline semiconductor layer on a first amorphous semiconductor layer. The first polycrystalline semiconductor layer is then converted to a second amorphous semiconductor layer. At least a portion of the second amorphous semiconductor layer is then converted to a second polycrystalline semiconductor layer. In particular, relatively large size crystal grains may be produced in a semiconductor layer by converting the second amorphous semiconductor layer and at least a portion of the first amorphous semiconductor layer to a second polycrystalline semiconductor layer.

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