Methods of forming phase changeable layers including...

Details Methods of forming phase changeable layers including... Methods of forming phase changeable layers including...

2008-05-02

2010-06-08

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S239000, C438S243000

Reexamination Certificate

active

07732250

ABSTRACT:
A method of forming a structure in a phase changeable memory cell can include forming a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode having a recess therein that extends beyond a boundary between the bottom electrode and the interlayer dielectric. A phase changeable layer can be formed in the recess including a protruding potion of the phase changeable layer that protrudes into the bottom electrode beyond the boundary.

REFERENCES:
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 6844268 (2005-01-01), Sugaya
patent: 2002/0175322 (2002-11-01), Doan et al.

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