Methods of forming phase-change memory units, and methods of...

Details Methods of forming phase-change memory units, and methods of... Methods of forming phase-change memory units, and methods of...

2009-04-09

2011-10-25

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

C438S128000, C438S483000, C438S478000, C438S479000, C438S637000, C257SE21209, C257SE21662, C257SE21663, C257SE21687, C257SE21688

Reexamination Certificate

active

08043924

ABSTRACT:
In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.

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