Methods of forming patterns utilizing lithography and spacers

Details Methods of forming patterns utilizing lithography and spacers Methods of forming patterns utilizing lithography and spacers

2008-10-09

2011-10-18

Deo, Duy (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C430S313000, C257SE21249

Reexamination Certificate

active

08039399

ABSTRACT:
Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alternate with features of the first set. Spacer material is formed over and between the features of the first and second sets. The spacer material is anisotropically etched to form spacers along the features of the first and second sets. The features of the first and second sets are then removed to leave a pattern of the spacers over the substrate.

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