Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-02-26
2000-06-13
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438734, 438743, H01L 21302
Patent
active
060749571
ABSTRACT:
Methods of forming contact openings and methods of controlling the degree of taper of contact openings are described. In one implementation, a layer is first etched through a contact mask opening using a first set of etching conditions. The etching conditions provide a first degree of sidewall taper from vertical, if etching completely through the layer. After the first etching, the layer is second etched through the contact mask opening using a second set of etching conditions. The second set of etching conditions provide a second degree of sidewall taper from vertical, if etching completely through the layer. The second degree of sidewall taper is different from the first degree of taper. In another embodiment, a material through which a contact opening is to be etched to a selected depth is formed over a substrate. A masking layer having an opening therein is formed over the material. The material is first etched through the opening with the first etch having a first selectivity relative to the masking layer. After the first etch, and at a depth which is less than about 50% of the selected depth, the material is second etched, with the second etch having a second selectivity relative to the masking layer which is greater than the first selectivity. In a preferred implementation, the second degree of selectivity is achieved by modifying an etch parameter during the etching of the contact opening.
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Donohoe Kevin G.
Stocks Richard L.
Deo Duy-Vu
Micro)n Technology, Inc.
Utech Benjamin L.
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