Methods of forming ohmic layers through ablation capping layers

Details Methods of forming ohmic layers through ablation capping layers Methods of forming ohmic layers through ablation capping layers

2007-06-14

2010-12-14

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S602000, C438S769000, C438S931000, C257SE21294

Reexamination Certificate

active

07851343

ABSTRACT:
A method of forming an ohmic layer for a semiconductor device includes forming a metal layer on a Silicon Carbide (SiC) layer and forming an ablation capping layer on the metal layer. Laser light is impinged through the ablation capping layer to form a metal-SiC material.

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