Methods of forming nitride films

Details Methods of forming nitride films Methods of forming nitride films

2005-08-16

2005-08-16

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S534000, C427S569000, C427S574000, C427S255394, C427S255180, C427S255210, C427S372200, C427S397700, C438S522000, C438S792000, C438S902000

Reexamination Certificate

active

06929831

ABSTRACT:
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.

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