Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S674000, C257SE21575
Reexamination Certificate
active
07964490
ABSTRACT:
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
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Clendenning Scott Bruce
Mukherjee Niloy
Pillarisetty Ravi
Fan Michele
Intel Corporation
Smith Matthew S
Winkle, PLLC
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