Methods of forming nanoscopic wire-based devices and arrays

Details Methods of forming nanoscopic wire-based devices and arrays Methods of forming nanoscopic wire-based devices and arrays

2008-07-15

2008-07-15

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE51040, C977S762000

Reexamination Certificate

active

07399691

ABSTRACT:
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

REFERENCES:
patent: 2923920 (1960-02-01), Fitch
patent: 3873359 (1975-03-01), Lando
patent: 3873360 (1975-03-01), Lando
patent: 3900614 (1975-08-01), Lando
patent: 4673474 (1987-06-01), Ogawa
patent: 4939556 (1990-07-01), Eguchi et al.
patent: 4979149 (1990-12-01), Popovic et al.
patent: 5089545 (1992-02-01), Pol
patent: 5274602 (1993-12-01), Glenn
patent: 5352651 (1994-10-01), Debe et al.
patent: 5453970 (1995-09-01), Rust et al.
patent: 5475341 (1995-12-01), Reed
patent: 5589692 (1996-12-01), Reed
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5739057 (1998-04-01), Tiwari et al.
patent: 5747180 (1998-05-01), Miller et al.
patent: 5751156 (1998-05-01), Muller et al.
patent: 5774414 (1998-06-01), Melzner et al.
patent: 5847565 (1998-12-01), Narayanan
patent: 5858862 (1999-01-01), Westwater et al.
patent: 5897945 (1999-04-01), Lieber et al.
patent: 5903010 (1999-05-01), Flory et al.
patent: 5948470 (1999-09-01), Harrison et al.
patent: 5997832 (1999-12-01), Lieber et al.
patent: 6036774 (2000-03-01), Lieber et al.
patent: 6038060 (2000-03-01), Crowley
patent: 6060724 (2000-05-01), Flory et al.
patent: 6069380 (2000-05-01), Chou et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6203864 (2001-03-01), Zhang et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6346189 (2002-02-01), Dai et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6528020 (2003-03-01), Dai et al.
patent: 6536106 (2003-03-01), Jackson et al.
patent: 6766817 (2004-07-01), da Silva
patent: 6781166 (2004-08-01), Lieber et al.
patent: 7172953 (2007-02-01), Lieber et al.
patent: 2002/0179434 (2002-12-01), Dai et al.
patent: 11011917 (1999-01-01), None
patent: WO 98/39250 (1998-09-01), None
patent: WO 98/42620 (1998-10-01), None
patent: WO 00/09443 (2000-02-01), None
patent: WO 00/17101 (2000-03-01), None
patent: WO 00/19494 (2000-04-01), None
patent: WO 01/03208 (2001-01-01), None
patent: WO 02/17362 (2002-02-01), None
patent: WO 02/48701 (2002-06-01), None
Patent Abstarcts of Japan machine translation of JP 11-011917, Jan. 19, 1999.
C.P. Collier, et al., “Electronically Configurable Molecular-Based Logic Gates,” Science, vol. 285, Jul. 16, 1999, pp. 391-394.
J. Chen, et al., “Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device,” Science, vol. 286, Nov. 19, 1999, pp. 1550-1551.
Rueckes, Thomas et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,” Jul. 7, 2000, Science, vol. 289, pp. 94-97.
Office Action dated Jul. 26, 2005 from U.S. Appl. No. 10/812,653.
Office Action dated Nov. 4, 2002 from U.S. Appl. No. 10/033,369.
Office Action dated Nov. 19, 2004 from U.S. Appl. No. 10/812,653.
Office Action dated Feb. 21, 2006 from U.S. Appl. No. 10/812,653.
Office Action dated Apr. 3, 2006 from U.S. Appl. No. 11/313,096.
Collins, P.G. et al., “Nanotube Nanodevice,” Science, 1997, 278:100-103.
Dume, “Sizing up nanotubes,”PhysicsWeb, Jun. 28, 2006 (web article).
Kim, P. et al., “Electronic Density of States of Atomically Resolved Single-Walled Carbon Nanotubes: Van Hove Singularities and End States,” Physical Review Letters, 1999, 82(6):1225-1228.
Kong, J. et al., “Chemical vapor deposition of methane for single-walled carbon nanotubes,” Chemical Physics Letters, 1998, 292:567-574.
Kong, J. et al., “Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers,” Nature, 1998, 395(29):878-881.
Liu, J. et al., “Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates,” Chemical Physics Letters, 1999, 303:125-129.
Tans, S.J. et al., “Room-temperature transistor based on a single carbon nanotube,” Nature, 1998, 393:49-52.
Wong, S.S. et al., “Covalently functionalized nanotubes as nanometre-sized probes in chemistry and biology,” Nature, 394:52-55.
Wong, S.S. et al., “Covalently-Functionalized Single-Walled Carbon Nanotube Probe Tips for Chemical Force Microscopy,” J. Am. Chem. Soc., 1998 120:8557-8558.
Yamamoto, et al., “Orientation and Purification of Carbon Nanotubes using AC Electrophoresis,”J. Phys. D.: Appl. Phys. 31(8), L34-L36 (1998).
Office Action dated Apr. 7, 2006 in U.S. Appl. No. 10/973,665.
Office Action dated Oct. 13, 2006 in U.S. Appl. No. 10/812,653.
Office Action dated Feb. 7, 2007 in U.S. Appl. No. 11/592,809.

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