Methods of forming moisture barrier for low K film...

Details Methods of forming moisture barrier for low K film... Methods of forming moisture barrier for low K film...

2011-08-23

2011-08-23

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C438S783000, C257SE21627, C257SE21277

Reexamination Certificate

active

08003549

ABSTRACT:
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

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