Methods of forming MIM type capacitor structures using low...

Details Methods of forming MIM type capacitor structures using low... Methods of forming MIM type capacitor structures using low...

2006-02-07

2006-02-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S240000, C438S253000, C438S785000, C438S957000

Reexamination Certificate

active

06995071

ABSTRACT:
Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO2dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfO2dielectric layer.

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Notice to Submit a Response for Korean Patent Application No. 10-2003-0029368 mailed on Apr. 29, 2005.

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