Methods of forming microelectronic packaging substrates...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S051000, C438S055000, C438S064000, C438S107000, C438S411000, C438S421000, C438S597000, C438S598000, C438S618000, C438S619000, C438S666000, C438S667000, C438S674000

Reexamination Certificate

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07842613

ABSTRACT:
Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate. This slot is formed to be sufficiently narrow to block plating of the metal seed layer onto sidewalls of the slot. Thereafter, the at least a pair of electrodes are selectively electroplated onto side-by-side portions of the metal seed layer on the sidewall of the trench. During this electroplating step, the slot is used to provide a self-aligned separation between the pair of electrodes.

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patent: 7081412 (2006-07-01), Heschel
patent: 2005/0236562 (2005-10-01), Kuhmann et al.
patent: 2006/0097388 (2006-05-01), Breitschwerdt et al.
patent: 2006/0117551 (2006-06-01), Baumgartner et al.
patent: 2006/0238067 (2006-10-01), Dausch
patent: 2008/0223429 (2008-09-01), Everett et al.
patent: 2008/0308920 (2008-12-01), Wan
patent: 2009/0212407 (2009-08-01), Foster et al.
patent: 2009/0256251 (2009-10-01), Getz et al.

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