Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-01-07
2010-11-30
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S051000, C438S055000, C438S064000, C438S107000, C438S411000, C438S421000, C438S597000, C438S598000, C438S618000, C438S619000, C438S666000, C438S667000, C438S674000
Reexamination Certificate
active
07842613
ABSTRACT:
Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate. This slot is formed to be sufficiently narrow to block plating of the metal seed layer onto sidewalls of the slot. Thereafter, the at least a pair of electrodes are selectively electroplated onto side-by-side portions of the metal seed layer on the sidewall of the trench. During this electroplating step, the slot is used to provide a self-aligned separation between the pair of electrodes.
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Au Bac H
Integrated Device Technology Inc.
Myers Bigel, et al.
Picardat Kevin M
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