Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-07-02
2000-10-31
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438656, 438680, 438683, 438303, 438664, A01L 2144
Patent
active
061402303
ABSTRACT:
The present invention relates to a method of forming a metal silicide layer upon an active area that is part of a junction in order to facilitate further miniaturization that is demanded and dictated by the need for smaller devices. A single PECVD process makes three distinct depositions. First, a metal silicide forms by the reaction: MHal+Si+H.sub.2 .fwdarw.MSi.sub.x +HHal, where M represents a metal and Hal represents a preferred halogen or the like. Second, a metal nitride forms upon areas not containing Si by the reaction: MHal+N.sub.2 +H.sub.2 .fwdarw.MN+HHal. Third, a metal nitride forms upon areas of evolving metal silicide due to a diffusion barrier effect that makes formation of the metal silicide self limiting. Ultimately, a metal nitride layer will be uniformly disposed in a substantially uniform composition covering all underlying structures upon a semiconductor substrate.
REFERENCES:
patent: 4676866 (1987-06-01), Tang et al.
patent: 4914500 (1990-04-01), Liu et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5654575 (1997-08-01), Jeng
patent: 5866213 (1999-02-01), Foster et al.
patent: 5975912 (1999-11-01), Hillman et al.
Kamashida, et al., "Self-aligned TiN Formation by N2 Plasma Bias Treatment of TiSi2 Deposited by Selective Chemical Vapor Deposition," Jpn. J. Appl. Phys., vol. 36 (1977) pp. 642-647, Part 1, No. 2, Feb. 1997.
Bowers Charles
Micro)n Technology, Inc.
Nguyen Thanh
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