Methods of forming metal lines in semiconductor devices

Details Methods of forming metal lines in semiconductor devices Methods of forming metal lines in semiconductor devices

2006-02-21

2006-02-21

Baumeister, Bradley (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S072000, C438S622000, C438S628000, C438S636000, C438S654000, C438S751000

Reexamination Certificate

active

07001843

ABSTRACT:
Methods for forming metal lines in semiconductor devices are disclosed. One example method may include forming a lower adhesive layer on a semiconductor substrate; forming a metal layer including aluminum on the lower adhesive layer; forming an anti-reflection layer on the metal layer; forming a photomask on the anti-reflection layer; performing an initial etching, a main etching and an over-etching for the anti-reflection layer, the metal layer and the lower adhesive layer, respectively, in a region which is not protected by the photomask, using C3F8as a main etching gas; and removing the photomask residual on the anti-reflection layer.

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