Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-12-27
2010-11-30
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S680000, C438S763000, C257SE21011
Reexamination Certificate
active
07842581
ABSTRACT:
When a metal layer formed by reaction of a metal source and an oxygen (O2) source is deposited, oxidization of a conductive layer disposed under or on the metal layer can be reduced and/or prevented by a method of forming the metal layer and a method of fabricating a capacitor using the same. Between forming the conductive layer and the metal layer, and between forming the metal layer and the conductive layer, a cycle of supplying a metal source, purging, supplying an oxygen source, purging, plasma processing of reduction gas and purging is repeated at least once. In this case, the metal layer is formed by repeating a cycle of supplying a metal source, purging, supplying an oxygen source and purging.
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Office Action from corresponding U.S. Appl. No. 10/801,208, Mailed Dec. 23, 2009.
Chung Suk-Jin
Kim Jin-Yong
Kim Wan-Don
Lee Kwang-Hee
Yoo Cha-Young
Landau Matthew C
Myers Bigel & Sibley & Sajovec
Nicely Joseph C
Samsung Electronics Co,. Ltd.
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