Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2008-01-01
2008-01-01
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S785000, C257SE21010, C257SE21021
Reexamination Certificate
active
07314806
ABSTRACT:
A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.
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Choi Jae-hyoung
Choi Jeong-sik
Chung Jeong-hee
Kim Ki-Chul
Kim Sung-tae
Dang Trung
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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