Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-11
2008-03-11
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S650000, C438S677000, C438S686000, C257SE21170, C257S021000, C257SE21582, C257SE21585
Reexamination Certificate
active
07341947
ABSTRACT:
The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.
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Kramer Steve
Ohde Hiroyuki
Wai Chien M.
Ghyka Alexander
Micro)n Technology, Inc.
Wells St. John P.S.
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