Methods of forming magnetic memory devices including...

Details Methods of forming magnetic memory devices including... Methods of forming magnetic memory devices including...

2006-02-09

2009-06-02

Wilczewski, M. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S705000, C257SE21665

Reexamination Certificate

active

07541199

ABSTRACT:
Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic layer and a tunnel barrier layer may be relatively high. Using the tunnel barrier layer as an etch-stop layer, the oxidized portion of the top magnetic layer is selectively removed to form a top magnetic pattern, and to expose at least a portion of opposite sidewalls of the top magnetic pattern and the tunnel barrier layer. The unoxidized portion of the top magnetic layer forms a top magnetic pattern.

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Notice to Submit Response in Korean Application No. 10-2005-0032001; Date of mailing Jun. 29, 2006.
Translation of Notice to Submit Response in Korean Application No. 10-2005-0032001; Date of mailing Jun. 29, 2006.

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