Methods of forming low-k dielectric layers containing carbon...

Details Methods of forming low-k dielectric layers containing carbon... Methods of forming low-k dielectric layers containing carbon...

2007-02-02

2009-08-25

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S759000, C257SE51040, C257SE21575

Reexamination Certificate

active

07579272

ABSTRACT:
Methods of forming low-k dielectric layers for use in the manufacture of semiconductor devices and fabricating semiconductor structures using the low-k dielectric material. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.

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