Methods of forming layers

Details Methods of forming layers Methods of forming layers

2007-08-28

2007-08-28

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S619000, C438S688000, C257SE21489, C427S098100

Reexamination Certificate

active

11218233

ABSTRACT:
The invention includes methods of forming layers conformally over undulating surface topographies associated with semiconductor substrates. The undulating surface topographies can first be exposed to one or more of titanium oxide, neodymium oxide, yttrium oxide, zirconium oxide and vanadium oxide to treat the surfaces, and can be subsequently exposed to a material that forms a layer conformally along the treated surfaces. The material can, for example, comprise an aluminum-containing compound and one or both of silane and silazane. The invention also includes semiconductor constructions having conformal layers formed over liners containing one or more of titanium oxide, yttrium oxide, zirconium oxide and vanadium oxide.

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M. A. Lefcourt, G.A. Ozin, J. Phys. Chem. 1991, 95, 2616.
M. A. Lefcourt, G. A. Ozin, J. Phys. Chem. 1991, 95, 2623.

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