Methods of forming intermediate semiconductor device...

Details Methods of forming intermediate semiconductor device... Methods of forming intermediate semiconductor device...

2006-03-29

2010-12-21

Zimmer, Marc S (Department: 1796)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S789000, C438S790000, C427S510000, C427S520000, C430S270100, C430S275100, C430S315000

Reexamination Certificate

active

07855154

ABSTRACT:
A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.

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