Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-11-07
2006-11-07
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S426000, C438S435000, C438S478000, C438S739000
Reexamination Certificate
active
07132349
ABSTRACT:
An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer.
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Choe Jeong-dong
Kim Seong-ho
Kim Sung-min
Lee Chang-sub
Lee Shin-ae
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
Smoot Stephen W.
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