Methods of forming integrated circuit devices including fuse...

Details Methods of forming integrated circuit devices including fuse... Methods of forming integrated circuit devices including fuse...

2005-04-12

2005-04-12

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S598000, C438S467000, C438S433000, C438S333000, C438S281000, C438S215000, C438S132000, C257S050000, C257S209000, C257S529000, C257S530000, C257S702000

Reexamination Certificate

active

06878614

ABSTRACT:
A method of forming an integrated circuit device can include forming a plurality of fuse wires on an integrated circuit substrate, and forming an insulating layer on the integrated circuit substrate and on the plurality of fuse wires so that the fuse wires are between the integrated circuit substrate and the insulating layer. A plurality of fuse cutting holes can be formed in the insulating layer wherein each of the fuse cutting holes exposes a target spot on a respective one of the fuse wires, and a cross-sectional area of the fuse wires can be reduced at the exposed target spots. Related structures are also discussed.

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Notice to Submit Response in Korean Application No. 10-2002-0003930, Issued Nov. 28, 2003.
English Translation of Notice to Submit Response in Korean Application No. 10-2002-0003930, Issued Nov. 28, 2003.

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