Methods of forming integrated circuit devices including a...

Details Methods of forming integrated circuit devices including a... Methods of forming integrated circuit devices including a...

2007-12-11

2007-12-11

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S233000, C438S533000

Reexamination Certificate

active

10622915

ABSTRACT:
Methods of forming a cell pad contact hole on an integrated circuit include forming adjacent gates on an integrated circuit substrate having a source/drain region extending between the gates. Gate spacers are formed on facing sidewalls of the adjacent gates. A cell pad contact hole is formed aligned to the gates and gate spacers that exposes the source/drain region in the integrated circuit substrate. A first poly film is formed in the cell pad contact hole. An ion region is formed in the source/drain region by ion-implanting through the first poly film and a second poly film is formed on the first poly film that substantially fills the cell pad contact hole.

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